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Date code: 25+MT40A2G8JE-062E AAT:E is a Micron automotive‑grade DDR4 SDRAM component, organized as 2G × 8‑bit (16 Gbit) volatile memory, qualified for harsh automotive environments and optimized for high‑bandwidth, low‑power operation in ADAS, infotainment, and automotive control systemsMicron.Core Functional OverviewAutomotive‑Grade High‑Speed Memory: Delivers high‑speed volatile random‑access storage for automotive SoCs, MCUs, and FPGAs, supporting a 3200 MT/s data rate at 1.6 GHz clock (tCK = 0.625 ns) with CL = 22.

Date code: 25+MT53E128M32D2DS‑053 AAT:A is a Micron automotive‑grade LPDDR4 SDRAM (Dual‑Die Package, DDP) organized as 128M × 32‑bit (4 Gbit) volatile memory, optimized for high‑bandwidth, low‑power automotive, industrial, and embedded applicationsMicron.Core Functional OverviewHigh‑Speed Automotive Memory: Delivers 3733 MT/s data rate (1866 MHz clock, tCK = 0.53 ns) for fast random‑access data storage in automotive ADAS, infotainment, and industrial control systems.Dual‑Die 32‑bit Architecture: Combines two 2Gb ×16 dies into a single 32‑bit device, enabling high‑bandwidth parallel data transfer.16n‑Prefetch Architecture: Supports high‑speed burst operations (BL16, BL32) with JEDEC LPDDR4 command compatibility.8 Banks per Channel: 8 internal banks per channel minimize bank conflicts and enable concurrent bank operations.

Date code: 25+MT53D512M32D2DS-046 AAT:D is a Micron automotive‑grade unified LPDDR4/LPDDR4X SDRAM in a dual‑die (DDP) package, organized as 512M × 32‑bit (16 Gbit) total density. It is AEC‑Q100 qualified and optimized for high‑bandwidth, low‑power operation in automotive infotainment, ADAS, telematics, and industrial embedded systems, with robust performanceOperates at ultra‑low unified LPDDR4/LPDDR4X voltages:VDD = 1.8 V (nominal, 1.70–1.95 V)VDD2 = 1.1 V (nominal, 1.06–1.17 V)VDDQ = 0.6 V (LPDDR4X) or 1.1 V (LPDDR4)Supports the full LPDDR4/LPDDR4X command set and advanced power/refresh features:Bidirectional/differential data strobe per byte laneSingle‑ended CK and DQS supportOperating temperature range: -40°C to +105°C (AAT automotive grade).Package: 200‑ball WFBGA (10 × 14.5 mm, MSL 3, RoHS‑compliant).16Gb automotive unified LPDDR4/LPDDR4X SDRAM, 512M×32, dual‑die, 4266 MT/s, 0.6V/1.1V/1.8V, 200‑WFBGA, -40°C to +105°C, AEC‑Q100 qualified for automotive ADAS/infotainment.

Date code: 25+MT53D512M16D1DS-046AIT:D is an automotive-grade LPDDR4X SDRAM from Micron, organized as 512M × 16-bit (8 Gbit) in a single-die package, designed for high-bandwidth, low-power operation in automotive, industrial and embedded applications.Core FunctionsProvides high-speed volatile random-access data storage for automotive SoCs, ADAS, infotainment, telematics and industrial controllers.Supports a data rate of 4266 MT/s with a clock cycle time of tCK = 0.46 ns.Implements a 16n-prefetch architecture for high-bandwidth burst read/write operations.Operates at ultra-low voltages typical for LPDDR4X:VDDQ = 0.60 V (typical)VDD = 1.8 V

Date code: 25+is a Micron 16Gb (2GB) DDR4 SDRAM organized as 1G × 16 bits, packaged in a 96‑pin FBGA (TwinDie™) package. It operates at 1.6 GHz (DDR4‑3200) with a 1.2V core/I/O supply, targeting high‑performance embedded, industrial, and enterprise applications.Core Features & FunctionalityArchitecture & Performance8n‑prefetch DDR4 architecture with two data words per clock cycle at the I/O pins, enabling 3200 MT/s data rate.Internal bank organization: 8 banks (2 groups × 4 banks) for x16 configuration, supporting concurrent bank operations.CAS Latency (CL) = 19 at 1.6 GHz, with 19 ns access time.

MT41K256M16TW-107 IT:P is a 4Gb (512Mb x16) industrial‑grade DDR3L SDRAM organized as 256M x16, housed in a 96‑ball FBGA package.Key FeaturesDensity & Organization: 4Gb (256M × 16 bits)Memory Architecture: 8n‑prefetch DDR3L; 8 internal banksSpeed Grade: -107, up to 1866 MT/s data rateVoltage: 1.35V low‑voltage operation (VDD = VDDQ = 1.35V)Interface: 16‑bit SSTL_15 with ODT and ZQ calibrationBurst Modes: BL8, BC4Power Management: Self‑refresh, automatic self‑refresh, power downTemperature Range: IT:P – -40°C to +95°CPackage: 96‑ball FBGA

Date code: 25+XIT:P is a Micron 4Gb (512MB) industrial‑grade DDR3L SDRAM organized as 256M × 16 bits, featuring Premium Lifecycle Product (PLP) status for long‑term availabilityMicron.Core FeaturesReliability: JEDEC compliant, RoHS‑compliant, MSL 3 (168 hours), and designed for high‑reliability industrial/embedded systems.Package: 96‑ball FBGA (8×14 mm, 0.8 mm pitch) with Sn/Ag/Cu terminal finish.Key SpecificationsDensity: 4 Gbit (512 MB)Organization: 256M × 16 bitsData Rate: 1866 MT/sVoltage: 1.35V (1.5V compatible)Temperature: -40°C to +95°C (XIT:P, PLP)Package: 96‑FBGA

MT41K256M16TW-107:P is a 4Gb (512MB) DDR3L SDRAM organized as 256M × 16 bits, with a 96‑ball FBGA package, designed for embedded and industrial applications.Core FeaturesDensity: 4 Gbit (512 MB), organization 256M × 16 bitsMemory Architecture: 8n‑prefetch DDR3L; 8 internal banksSpeed Grade: -107, 1866 MT/s data rate, CL=9Voltage: 1.35V low‑voltage operation (compatible with 1.5V)Interface: 16‑bit SSTL_15 with on‑die termination (ODT) and ZQ calibrationBurst Modes: BL8, BC4 with auto prechargePower Management: Self‑refresh, automatic self‑refresh (ASR), power down modesReliability: JEDEC compliant, RoHS compliant, industrial‑grade qualityPackage: 96‑ball FBGAShort BOM Version (1 line)4Gb (256M x16) DDR3L SDRAM, 1866 MT/s, 1.35V, 96‑ball FBGA, industrial‑grade, -107 speed bin.

Date code: 25+MT53E512M32D1NP-046 WT:B is a Micron embedded‑grade LPDDR4/LPDDR4X SDRAM in a single‑die package, organized as 512M × 32‑bit (16 Gbit) total density, optimized for high‑bandwidth, low‑power operation in embedded systems, industrial controllers, IoT gateways, and consumer electronics.Core FunctionsProvides high‑speed volatile random‑access memory for embedded SoCs, industrial processors, and low‑power computing platforms.Supports a data rate of 4266 MT/s (2.133 GHz clock) with a clock cycle time of tCK = 0.46 ns.Implements a 16n‑prefetch DDR architecture with 8 internal banks per channel for concurrent high‑bandwidth burst read/write operations.Operates at ultra‑low LPDDR4/LPDDR4X voltages:VDD = 1.8 V (nominal, 1.70–1.95 V)VDD2 = 1.1 V (nominal, 1.06–1.17 V)VDDQ = 0.6 V (LPDDR4X) or 1.1 V (LPDDR4)Supports the full LPDDR4/LPDDR4X command set and advanced power/refresh features:Active, Read, Write, Precharge, Auto‑Refresh, Self‑RefreshBurst lengths: BL16, BL32 (programmable and on‑the‑fly)Partial‑Array Self‑Refresh (PASR)Temperature‑compensated self‑refresh (controlled by on‑chip temperature sensor)Directed per‑bank refresh for concurrent bank operationClock stop and deep power‑down modesBuilt‑in signal integrity and reliability features:On‑die termination (ODT, programmable VSS termination)Selectable output drive strengthData bus inversion (DBI)Bidirectional/differential data strobe per byte laneSingle‑ended CK and DQS supportOperating temperature range: -25°C to +85°C (WT industrial/embedded grade).Package: 200‑ball WFBGA (compact surface‑mount package, MSL 3, 168‑hour moisture sensitivity).Short 1‑line Description16Gb embedded LPDDR4/LPDDR4X SDRAM, 512M×32, single‑die, 4266 MT/s, 0.6V/1.1V/1.8V, 200‑WFBGA, -25°C to +85°C, for industrial, IoT, and embedded systems.

Date code: 25+MT53D768M64D4SQ-046 WT:A is a Micron embedded‑grade LPDDR4/LPDDR4X SDRAM in a quad‑die (4‑die) package, Core Functions   burst read/write operations.   Operates at ultra‑low LPDDR4X/LPDDR4 voltages:VDD = 1.8 V (nominal, 1.70–1.95 V)  VDD2 = 1.1 V (nominal, 1.06–1.17 V)  VDDQ = 0.6 V (LPDDR4X) or 1.1 V (LPDDR4)Single‑ended CK and DQS support  Operating temperature range: -25°C to +85°C (WT industrial/embedded grade).48Gb embedded LPDDR4/LPDDR4X SDRAM, 768M×64, quad‑die, 4266 MT/s, 0.6V/1.1V/1.8V, 556‑TFBGA, -25°C to +85°C, for VR/AR, industrial, and high‑performance embedded systems.

Date code: 25+Micron 64Gb Commercial LPDDR5 SDRAMThis component is a 64 Gigabit (8GB) LPDDR5 DRAM chip. It is designed for flagship mobile devices and computing platforms that demand high bandwidth and power efficiency. It features a x32 interface and operates at a speed of 6400 MT/s, making it suitable for advanced gaming, AI processing, and high-resolution media applications.Device Type: LPDDR5 SDRAM (Low Power DDR5) – Commercial GradeDensity: 64Gb (Gigabits) / 8GB (Gigabytes)Organization: 2Gb x32

Date code: 25+Micron 64Gb LPDDR5 SDRAM (Low Power Double Data Rate 5)This component is a 64 Gigabit (8GB) LPDDR5 DRAM chip. It is designed for high-end mobile and embedded applications requiring large memory capacity and high data throughput. It features a x32 interface and operates at high speeds.Device Type: LPDDR5 SDRAM (Low Power DDR5)Density: 64Gb (Gigabits) / 8GB (Gigabytes)Organization: 2Gb x32

Date code: 25+Part Number    MT53E2G32D4DE-046 WT:AManufacturer    Micron TechnologyMemory Type    LPDDR5 SDRAMCapacity    8GB (64Gb)Organization    x32 (2 Gig x 32)Speed Grade    046 (Indicates specific timing/speed bin, typically 6400 Mbps class)Temperature    Wide Temperature Range (Automotive/Industrial Grade)Package    FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT40A1G8SA-062E:EManufacturer    Micron TechnologyMemory Type    DDR4 SDRAMCapacity    8Gb (1GB)Organization    x8 (1 Gig x 8)Speed Grade    062E (3200 MT/s / DDR4-3200)Voltage    1.2V (VDD/VDDQ)Temperature    Commercial/Industrial Standard (0°C to 95°C typical)Package    78-ball FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT61K512M32KPA-14:CManufacturer    Micron TechnologyMemory Type    GDDR6 SGRAM (Graphics RAM)Capacity    16Gb (2GB)Organization    512 Meg x 32 (x32 Interface)Speed Grade    14 Gbps (14 GT/s)Voltage    1.35V (Typical VDD)Banks    16 BanksPackage    FBGA-180 (12mm x 14mm)FBGA Code    D9ZPM

Date code: 25+Part Number    MT41K512M16VRN-107 AAT:PManufacturer    Micron TechnologyMemory Type    DDR3L SDRAM (Low Voltage)Capacity    8Gb (1GB)Organization    x16 (512 Meg x 16)Speed Grade    107 (Typically 1866 MT/s / DDR3L-1866)Voltage    1.35V (VDD/VDDQ)Temperature    -40°C to +105°C (Automotive Grade)Package    96-ball FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT53D512M32D2DS-046 AT:DManufacturer    Micron TechnologyMemory Type    LPDDR4X SDRAM (Mobile DRAM)Capacity    2GB (16Gb)Organization    x32 (512 Meg x 32)Speed Grade    046 (Indicates specific timing/speed bin, typically 4267 Mbps class)Voltage    VDD/VDDQ: 1.1V / 0.6V (Low Power I/O)Temperature    -40°C to +105°C (Automotive Grade)Package    FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT53D1024M32D4DT-046 AIT:DManufacturer    Micron TechnologyMemory Type    LPDDR4X SDRAM (Mobile DRAM)Capacity    4GB (32Gb)Organization    x32 (1 Gig x 32)Speed Grade    046 (Indicates specific timing/speed bin, typically 4267 Mbps class)Voltage    VDD/VDDQ: 1.1V / 0.6V (Low Power I/O)Temperature    -40°C to +105°C (Automotive/Industrial Grade)Package    FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT53E512M32D1ZW-046 AAT:BManufacturer    Micron TechnologyMemory Type    LPDDR5 SDRAMCapacity    2GB (16Gb)Organization    x32 (512 Meg x 32)Speed Grade    046 (Indicates specific timing/speed bin, typically 6400 Mbps class)Temperature    -40°C to +105°C (Automotive Grade)Package    FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT53E2G32D4DE-046 WT:AManufacturer    Micron TechnologyMemory Type    LPDDR5 SDRAMCapacity    8GB (64Gb)Organization    x32 (2 Gig x 32)Speed Grade    046 (Indicates specific timing/speed bin, typically 6400 Mbps class)Temperature    Wide Temperature Range (Automotive/Industrial Grade)Package    FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT62F1G32D2DS-023 AAT:CManufacturer    Micron TechnologyMemory Type    LPDDR5 SDRAMCapacity    4GB (32Gb)Organization    x32 (1 Gig x 32)Speed Grade    023 (Indicates specific timing/speed bin, typically 6400 Mbps class)Temperature    -40°C to +105°C (Automotive Grade)Package    FBGA (Fine-pitch Ball Grid Array)|

Date code: 25+Part Number    MT53E2G32D4DE-046 WT:AManufacturer    Micron TechnologyMemory Type    LPDDR5 SDRAMCapacity    8GB (64Gb)Organization    x32 (2 Gig x 32)Speed Grade    046 (Indicates specific timing/speed bin, typically 6400 Mbps class)Temperature    Wide Temperature Range (Automotive/Industrial Grade)Package    FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT40A1G8SA-062E:EManufacturer    Micron TechnologyMemory Type    DDR4 SDRAMCapacity    8Gb (1GB)Organization    x8 (1 Gig x 8)Speed Grade    062E (3200 MT/s / DDR4-3200)Voltage    1.2V (VDD/VDDQ)Temperature    Commercial/Industrial Standard (0°C to 95°C typical)Package    78-ball FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT61K512M32KPA-14:CManufacturer    Micron TechnologyMemory Type    GDDR6 SGRAM (Graphics RAM)Capacity    16Gb (2GB)Organization    512 Meg x 32 (x32 Interface)Speed Grade    14 Gbps (14 GT/s)Voltage    1.35V (Typical VDD)Banks    16 BanksPackage    FBGA-180 (12mm x 14mm)FBGA Code    D9ZPM

Date code: 25+Part Number    MT41K512M16VRN-107 AAT:PManufacturer    Micron TechnologyMemory Type    DDR3L SDRAM (Low Voltage)Capacity    8Gb (1GB)Organization    x16 (512 Meg x 16)Speed Grade    107 (Typically 1866 MT/s / DDR3L-1866)Voltage    1.35V (VDD/VDDQ)Temperature    -40°C to +105°C (Automotive Grade)Package    96-ball FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT53D512M32D2DS-046 AT:DManufacturer    Micron TechnologyMemory Type    LPDDR4X SDRAM (Mobile DRAM)Capacity    2GB (16Gb)Organization    x32 (512 Meg x 32)Speed Grade    046 (Indicates specific timing/speed bin, typically 4267 Mbps class)Voltage    VDD/VDDQ: 1.1V / 0.6V (Low Power I/O)Temperature    -40°C to +105°C (Automotive Grade)Package    FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT53D1024M32D4DT-046 AIT:DManufacturer    Micron TechnologyMemory Type    LPDDR4X SDRAM (Mobile DRAM)Capacity    4GB (32Gb)Organization    x32 (1 Gig x 32)Speed Grade    046 (Indicates specific timing/speed bin, typically 4267 Mbps class)Voltage    VDD/VDDQ: 1.1V / 0.6V (Low Power I/O)Temperature    -40°C to +105°C (Automotive/Industrial Grade)Package    FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT53E512M32D1ZW-046 AAT:BManufacturer    Micron TechnologyMemory Type    LPDDR5 SDRAMCapacity    2GB (16Gb)Organization    x32 (512 Meg x 32)Speed Grade    046 (Indicates specific timing/speed bin, typically 6400 Mbps class)Temperature    -40°C to +105°C (Automotive Grade)Package    FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT53E2G32D4DE-046 WT:AManufacturer    Micron TechnologyMemory Type    LPDDR5 SDRAMCapacity    8GB (64Gb)Organization    x32 (2 Gig x 32)Speed Grade    046 (Indicates specific timing/speed bin, typically 6400 Mbps class)Temperature    Wide Temperature Range (Automotive/Industrial Grade)Package    FBGA (Fine-pitch Ball Grid Array)

Date code: 25+Part Number    MT62F1G32D2DS-023 AAT:CManufacturer    Micron TechnologyMemory Type    LPDDR5 SDRAMCapacity    4GB (32Gb)Organization    x32 (1 Gig x 32)Speed Grade    023 (Indicates specific timing/speed bin, typically 6400 Mbps class)Temperature    -40°C to +105°C (Automotive Grade)Package    FBGA (Fine-pitch Ball Grid Array)|