Description
MT40A1G16TD-062E AIT:F is a Micron 16Gb (2GB) DDR4 SDRAM organized as 1G × 16 bits, packaged in a 96‑pin FBGA (TwinDie™) package. It operates at 1.6 GHz (DDR4‑3200) with a 1.2V core/I/O supply, targeting high‑performance embedded, industrial, and enterprise applications.
Core Features & Functionality
Architecture & Performance
8n‑prefetch DDR4 architecture with two data words per clock cycle at the I/O pins, enabling 3200 MT/s data rate.
Internal bank organization: 8 banks (2 groups × 4 banks) for x16 configuration, supporting concurrent bank operations.
CAS Latency (CL) = 19 at 1.6 GHz, with 19 ns access time.
Programmable read/write latency and burst lengths (BL8, BC4) for flexible data access.
On‑die termination (ODT) for signal integrity and ZQ calibration for impedance matchingMicron.
Command/Address (CA) parity and on‑die VREFDQ generation for robust operation.
Memory Organization
16Gb density (2GB), configured as 1G × 16 bits (TwinDie™: two 8Gb x8 dies)Micron.
Single rank (1CS) organization with uniform bank/row/column addressing.
Page size: 8KB (1K × 16 bits) per bank.
Refresh: Auto‑refresh (AR), self‑refresh (SR), and temperature‑compensated refresh (TCR); 8192 refresh cycles/64 ms.
Voltage & Power
Supply voltage: VDD = VDDQ = 1.2V ± 60mV (1.14V–1.26V).
Pseudo open‑drain (POD) I/O interface for low power and noise immunity.
Ultra‑low power modes: deep power‑down (DPD) and partial array self‑refresh (PASR).
Dynamic power management with clock stop and power‑down features.
Reliability & Qualification
Industrial‑grade temperature range: -40°C to +95°C (AIT:F).
High reliability: JEDEC standard compliant, RoHS‑compliant packaging.
Data integrity: ECC support (for x16 configurations) and internal error correctionMicron.
Moisture sensitivity level: MSL 3 (168 hours).
Package & Interface
96‑pin FBGA package (7.5mm × 13mm) with TwinDie™ stackingMicron.
Standard DDR4 pinout with differential clock (CK/CK#), chip select (CS#), command/address, and 16‑bit data bus (DQ[15:0]).
Supports point‑to‑point and multi‑rank DDR4 memory systems.
Key Specifications
Parameter Value
Density 16 Gbit (2 GB)
Organization 1G × 16 bits (TwinDie™)
Interface DDR4 SDRAM, 16‑bit POD
Clock Speed 1.6 GHz (DDR4‑3200)
Data Rate 3200 MT/s
CAS Latency CL = 19
Supply Voltage 1.14V – 1.26V (1.2V nominal)
Package 96‑pin FBGA (TwinDie™)
Temperature Grade AIT:F (-40°C to +95°C)
Refresh 8192 cycles / 64 ms
Page Size 8KB per bank
I/O Type Pseudo Open‑Drain (POD)
