• MT41K256M16TW-107:P
  • MT41K256M16TW-107:P

MT41K256M16TW-107:P

No.Micron memory chip
MT41K256M16TW-107:P is a 4Gb (512MB) DDR3L SDRAM organized as 256M × 16 bits, with a 96‑ball FBGA package, designed for embedded and industrial applications.
Core Features
Density: 4 Gbit (512 MB), organization 256M × 16 bits
Memory Architecture: 8n‑prefetch DDR3L; 8 internal banks
Speed Grade: -107, 1866 MT/s data rate, CL=9
Voltage: 1.35V low‑voltage operation (compatible with 1.5V)
Interface: 16‑bit SSTL_15 with on‑die termination (ODT) and ZQ calibration
Burst Modes: BL8, BC4 with auto precharge
Power Management: Self‑refresh, automatic self‑refresh (ASR), power down modes
Reliability: JEDEC compliant, RoHS compliant, industrial‑grade quality
Package: 96‑ball FBGA
Short BOM Version (1 line)
4Gb (256M x16) DDR3L SDRAM, 1866 MT/s, 1.35V, 96‑ball FBGA, industrial‑grade, -107 speed bin.
$4.58
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  • MT41K256M16TW-107:P

Description

MT41K256M16TW-107:P is a 4Gb (512MB) DDR3L SDRAM organized as 256M × 16 bits, with a 96‑ball FBGA package, designed for embedded and industrial applications.
Core Features
Density: 4 Gbit (512 MB), organization 256M × 16 bits
Memory Architecture: 8n‑prefetch DDR3L; 8 internal banks
Speed Grade: -107, 1866 MT/s data rate, CL=9
Voltage: 1.35V low‑voltage operation (compatible with 1.5V)
Interface: 16‑bit SSTL_15 with on‑die termination (ODT) and ZQ calibration
Burst Modes: BL8, BC4 with auto precharge
Power Management: Self‑refresh, automatic self‑refresh (ASR), power down modes
Reliability: JEDEC compliant, RoHS compliant, industrial‑grade quality
Package: 96‑ball FBGA
Short BOM Version (1 line)
4Gb (256M x16) DDR3L SDRAM, 1866 MT/s, 1.35V, 96‑ball FBGA, industrial‑grade, -107 speed bin.