Description
MT53E512M32D1NP-046 WT:B is a Micron embedded‑grade LPDDR4/LPDDR4X SDRAM in a single‑die package, organized as 512M × 32‑bit (16 Gbit) total density, optimized for high‑bandwidth, low‑power operation in embedded systems, industrial controllers, IoT gateways, and consumer electronics.
Core Functions
Provides high‑speed volatile random‑access memory for embedded SoCs, industrial processors, and low‑power computing platforms.
Supports a data rate of 4266 MT/s (2.133 GHz clock) with a clock cycle time of tCK = 0.46 ns.
Implements a 16n‑prefetch DDR architecture with 8 internal banks per channel for concurrent high‑bandwidth burst read/write operations.
Operates at ultra‑low LPDDR4/LPDDR4X voltages:
VDD = 1.8 V (nominal, 1.70–1.95 V)
VDD2 = 1.1 V (nominal, 1.06–1.17 V)
VDDQ = 0.6 V (LPDDR4X) or 1.1 V (LPDDR4)
Supports the full LPDDR4/LPDDR4X command set and advanced power/refresh features:
Active, Read, Write, Precharge, Auto‑Refresh, Self‑Refresh
Burst lengths: BL16, BL32 (programmable and on‑the‑fly)
Partial‑Array Self‑Refresh (PASR)
Temperature‑compensated self‑refresh (controlled by on‑chip temperature sensor)
Directed per‑bank refresh for concurrent bank operation
Clock stop and deep power‑down modes
Built‑in signal integrity and reliability features:
On‑die termination (ODT, programmable VSS termination)
Selectable output drive strength
Data bus inversion (DBI)
Bidirectional/differential data strobe per byte lane
Single‑ended CK and DQS support
Operating temperature range: -25°C to +85°C (WT industrial/embedded grade).
Package: 200‑ball WFBGA (compact surface‑mount package, MSL 3, 168‑hour moisture sensitivity).
Short 1‑line Description
16Gb embedded LPDDR4/LPDDR4X SDRAM, 512M×32, single‑die, 4266 MT/s, 0.6V/1.1V/1.8V, 200‑WFBGA, -25°C to +85°C, for industrial, IoT, and embedded systems.
