Description
MT53D768M64D4SQ-046 WT:A is a Micron embedded‑grade LPDDR4/LPDDR4X SDRAM in a quad‑die (4‑die) package, organized as 768M × 64‑bit (48 Gbit) total density, optimized for high‑bandwidth, low‑power operation in high‑performance embedded systems, VR/AR devices, industrial controllers, and high‑end mobile platforms.
Core Functions
Provides high‑speed volatile random‑access memory for embedded SoCs, XR processors, and high‑reliability embedded computing platforms.
Supports a data rate of 4266 MT/s (2.133 GHz clock) with a clock cycle time of tCK = 0.46 ns.
Implements a 16n‑prefetch DDR architecture with 8 internal banks per channel to enable concurrent high‑bandwidth burst read/write operations.
Operates at ultra‑low LPDDR4X/LPDDR4 voltages:
VDD = 1.8 V (nominal, 1.70–1.95 V)
VDD2 = 1.1 V (nominal, 1.06–1.17 V)
VDDQ = 0.6 V (LPDDR4X) or 1.1 V (LPDDR4)
Supports the full LPDDR4/LPDDR4X command set and advanced power/refresh features:
Active, Read, Write, Precharge, Auto‑Refresh, Self‑Refresh
Burst lengths: BL16, BL32 (programmable and on‑the‑fly)
Partial‑Array Self‑Refresh (PASR)
Temperature‑compensated self‑refresh (controlled by on‑chip temperature sensor)
Directed per‑bank refresh for concurrent bank operation
Clock stop and deep power‑down modes
Built‑in signal integrity and reliability features:
On‑die termination (ODT, programmable VSS termination)
Selectable output drive strength
Data bus inversion (DBI)
Bidirectional/differential data strobe per byte lane
Single‑ended CK and DQS support
Operating temperature range: -25°C to +85°C (WT industrial/embedded grade).
Package: 556‑ball TFBGA (12.4 × 12.4 mm) surface‑mount package.
Short 1‑line Description
48Gb embedded LPDDR4/LPDDR4X SDRAM, 768M×64, quad‑die, 4266 MT/s, 0.6V/1.1V/1.8V, 556‑TFBGA, -25°C to +85°C, for VR/AR, industrial, and high‑performance embedded systems.
