Description
Based on the part number MT62F2G64D8EK-026 WT:B, this component is a high-performance, high-density memory module manufactured by Micron Technology.
The code "WT" signifies that this is a Commercial/Industrial Temperature grade component, typically used in consumer electronics rather than automotive applications. This chip is a 128 Gigabit (16GB) LPDDR5 DRAM, designed for flagship mobile devices and high-performance computing where massive bandwidth and capacity are required.
Here is the functional description in English:
📝 Product Description
Micron 128Gb Mobile LPDDR5 SDRAM
This component is a 128 Gigabit (16GB) LPDDR5 DRAM chip. It is designed for high-end mobile and computing systems that demand maximum memory capacity and speed. It features a x64 interface and operates at a standard high-performance data rate of 6400 MT/s, providing the necessary bandwidth for 5G connectivity, AI processing, and high-fidelity mobile gaming.
🔑 Key Specifications & Features
Device Type: LPDDR5 SDRAM (Low Power DDR5) – Mobile/Commercial Grade
Density: 128Gb (Gigabits) / 16GB (Gigabytes)
Organization: 2Gb x64
The "2G64" indicates a memory depth of 2 Gigabits with a 64-bit data bus width.
Note: This high density is achieved using advanced die stacking technology, allowing for 16GB capacity in a single package.
Speed / Data Rate: The suffix "026" indicates a data rate of 6400 MT/s (Megatransfers per second).
Note: This is a standard high-performance speed bin for LPDDR5, offering a balance of speed and power efficiency.
Voltage: 1.05V (Core Voltage).
Note: LPDDR5 operates at lower voltages than standard DDR5 to preserve battery life in mobile devices.
Temperature Range: Commercial/Industrial temperature range (typically -25°C to +85°C).
Note: The "WT" designation is generally used for consumer electronics (smartphones, tablets) rather than automotive applications.
Package: 441-TFBGA (Fine Pitch Ball Grid Array)
Dimensions: 14mm x 14mm.
The "EK" package code corresponds to this specific 441-ball footprint, which is standard for high-density x64 LPDDR5 chips.
Key Technologies:
On-die ECC: Internal error correction to manage the high density of the memory array.
DFE (Decision Feedback Equalization): Enhances signal integrity at 6400 MT/s speeds.
WCK2CK Training: Ensures precise timing alignment between the data and command clocks for stability at high frequencies.
💡 Typical Applications
Flagship Smartphones: High-end mobile phones requiring 12GB or 16GB of RAM for seamless multitasking.
Premium Tablets: Devices requiring high bandwidth for content creation and media consumption.
5G Infrastructure: Baseband units requiring high-speed memory.
AIoT Devices: High-performance edge computing modules.
Note: The "WT:B" refers to the Revision code (Revision B). This identifies the specific manufacturing revision of the chip. In high-volume manufacturing, ensuring all components are of the same revision is important for system stability and compatibility.
