MT53E512M32D1ZW-046 AAT:B

Name: MT53E512M32D1ZW-046 AAT:B
Brand: gepuwei
SKU: Micron memory chip
Availability: InStock
Rating: 5 (1 reviews)

No.Micron memory chip

Date code: 25+
MT53E512M32D1ZW-046 AAT:B is a Micron automotive‑grade LPDDR4X/LPDDR4 SDRAM in a single‑die package, organized as 512M × 32‑bit (16 Gbit) total density, designed for high‑bandwidth, low‑power operation in automotive ADAS, infotainment, telematics, and industrial embedded systems.
Core Functions
Delivers high‑speed volatile random‑access data storage for automotive SoCs, ADAS controllers, and high‑reliability embedded processors.
Supports a data rate of 4266 MT/s (2.133 GHz clock) with a clock cycle time of tCK = 0.46 ns.
Implements a 16n‑prefetch DDR architecture with 8 internal banks per channel for concurrent high‑bandwidth burst read/write operations.
Operates at ultra‑low LPDDR4X/LPDDR4 voltages:
VDD = 1.8 V (nominal, 1.70–1.95 V range)
VDD2 = 1.1 V (nominal, 1.06–1.17 V range)
VDDQ = 0.6 V (LPDDR4X, typical) or 1.1 V (LPDDR4)
Supports full LPDDR4/LPDDR4X command set and operations:

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Description

Active, Read, Write, Precharge, Auto‑Refresh, Self‑Refresh
Burst lengths: BL16, BL32 (programmable and on‑the‑fly)
Partial‑Array Self‑Refresh (PASR)
Temperature‑compensated self‑refresh (controlled by on‑chip temperature sensor)
Directed per‑bank refresh for concurrent bank operation
Clock stop and deep power‑down modes
Built‑in signal integrity and reliability features:
On‑die termination (ODT, programmable VSS termination)
Selectable output drive strength
Data bus inversion (DBI)
Bidirectional/differential data strobe per byte lane
Single‑ended CK and DQS support
Automotive qualification: AEC‑Q100 Grade 2 compliant.
Operating temperature range: -40°C to +105°C (AAT automotive grade).
Package: 200‑ball TFBGA (10 × 14.5 mm, Ø0.40 SMD) surface‑mount package.
Short 1‑line Description
16Gb automotive LPDDR4X/LPDDR4 SDRAM, 512M×32, single‑die, 4266 MT/s, 0.6V/1.1V/1.8V, 200‑TFBGA, -40°C to +105°C, AEC‑Q100 qualified for automotive ADAS and infotainment.