Description
MT53E256M32D2DS-053 WT:B is a Micron embedded‑grade unified LPDDR4/LPDDR4X SDRAM in a dual‑die (2‑die) package, organized as 256M × 32‑bit (8 Gbit) total densityMicron. It is optimized for high‑bandwidth, low‑power operation in embedded computing, industrial controllers, IoT gateways, and mid‑range mobile platforms, delivering reliable performance across an extended temperature range.
Core Functions & Key Specifications
Serves as high‑speed volatile random‑access memory for embedded SoCs, industrial processors, and power‑constrained computing systems.
Supports a data rate of 3733 MT/s (1.866 GHz clock) with a clock cycle time of tCK = 0.535 ns (speed grade ‑053).
Implements a 16n‑prefetch DDR architecture with 8 internal banks per channel (2×16 I/O channels for x32 total width) to enable concurrent high‑bandwidth burst operations.
Operates at ultra‑low unified LPDDR4/LPDDR4X voltages:
VDD = 1.8 V (nominal, 1.70–1.95 V)
VDD2 = 1.1 V (nominal, 1.06–1.17 V)
VDDQ = 0.6 V (LPDDR4X) or 1.1 V (LPDDR4).
Supports the full LPDDR4/LPDDR4X command set and advanced power/refresh features:
Active, Read, Write, Precharge, Auto‑Refresh, Self‑Refresh
Burst lengths: BL16, BL32 (programmable and on‑the‑fly)
Partial‑Array Self‑Refresh (PASR)
Temperature‑compensated self‑refresh (on‑chip temperature sensor)
Directed per‑bank refresh for concurrent bank operation
Clock stop and deep power‑down modes.
Built‑in signal integrity and reliability features:
On‑die termination (ODT, programmable VSS termination)
Selectable output drive strength
Data bus inversion (DBI)
Bidirectional/differential data strobe per byte lane
Single‑ended CK and DQS support.
Operating temperature range: -30°C to +85°C (WT embedded/industrial grade)Micron.
Package: 200‑ball WFBGA (10 × 14.5 × 0.8 mm, Ø0.35 mm SMD, MSL 3).
Short 1‑line Description
8Gb embedded unified LPDDR4/LPDDR4X SDRAM, 256M×32, dual‑die, 3733 MT/s, 0.6V/1.1V/1.8V, 200‑WFBGA, -30°C to +85°C, for industrial, IoT, and embedded systems.
