Description
MT40A512M16LY-075E is a high-speed DDR4 SDRAM memory device manufactured by Micron, organized as 512M × 16 bits (8 Gbit) density, designed for high-bandwidth, low-power system applications.
Key Functions
Provides high-speed volatile data storage and random access for processors, FPGAs, and embedded systems.
Supports 2133 MT/s data rate at a clock frequency of up to 1066 MHz (tCK = 0.75 ns).
Operates on a 1.2V supply for low power consumption, suitable for energy-efficient designs.
Uses an 8n-prefetch architecture to achieve high bandwidth while maintaining backward-compatible command structure.
Supports standard DDR4 functions including:
Active, Read, Write, Precharge, Refresh (Auto-Refresh, Self-Refresh)
Burst Read and Burst Write operations
Data Bus Inversion (DBI) for signal integrity and power reduction
Write CRC and Command/Address Parity for reliability
On-die VREFDQ calibration
Features per-DRAM addressability and ZQ calibration for signal quality.
Packaged in a 96-ball FBGA for compact surface-mount assembly.
Designed for use in embedded computing, industrial systems, networking, and consumer electronics requiring reliable high-bandwidth memory operation.
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