MT40A512M16LY-062E AUT:E

Name: MT40A512M16LY-062E AUT:E
Brand: gepuwei
SKU: Micron memory chip
Availability: InStock
Rating: 5 (1 reviews)

No.Micron memory chip

Date code: 25+
MT40A1G16KD-062E:E TR is a 16Gb (1G × 16) DDR4 SDRAM memory device manufactured by Micron Technology. It is organized as 1 Gigabit × 16 bits, delivering a total density of 16 gigabits (2 gigabytes). The device operates at a 3200 Mbps data rate per pin, corresponding to a clock cycle time of tCK = 0.625 ns and CAS latency CL = 22 (DDR4‑3200 speed grade). It features an 8n‑prefetch architecture combined with a high‑speed interface that transfers two data words per clock cycle at the I/O pins. VREFDQ generation and 1.2V pseudo open‑drain I/O. Key features include:
Programmable data strobe preambles and preamble training
Compliance with JEDEC JESD‑79‑4 standards
96‑ball FBGA package (9mm × 13mm, Pb‑free)
Commercial operating temperature range: 0°C to +95°C
TR suffix indicates tape‑and‑reel packaging for automated assembly

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Description

MT40A512M16LY-062E AUT:E – English Functional Description
Functional Description
The MT40A512M16LY-062E AUT:E is an AEC‑Q100 qualified DDR4 SDRAM memory component from Micron. It is organized as 512M × 16 bits, providing a total density of 8 Gb (1 GB).
This device supports a data rate of 3200 Mbps per pin, corresponding to a speed grade of DDR4‑3200 with a cycle time of tCK = 0.625 ns. It uses an 8n‑prefetch architecture and operates at a nominal supply voltage of 1.2V, designed for low power and high bandwidth.
Key characteristics:
Automotive‑grade qualification: AEC‑Q100
Operating temperature range: -40°C to +125°C
FBGA package, lead‑free and RoHS compliant
Supports auto‑refresh, self‑refresh, and low‑power operating modes
Compliant with JEDEC DDR4 SDRAM standard JESD79‑4
The suffix AUT:E designates automotive grade and Micron’s internal production, quality control, and traceability code.