Description
MT40A512M16LY-062E is a high-speed DDR4 SDRAM memory device from Micron. It is organized as 512M × 16 bits, with a total density of 8 Gb (1 GB).
This component supports a data rate of 3200 Mbps per pin, corresponding to speed grade DDR4‑3200 and a clock cycle time of tCK = 0.625 ns. It uses an 8n‑prefetch architecture and operates at a nominal supply voltage of 1.2V, providing high bandwidth and low power consumption.
Key Features
Organization: 512M × 16
Density: 8 Gb (1 GB)
Speed: DDR4‑3200, 3200 Mbps per pin
Voltage: 1.2V core and I/O supply
8n-prefetch architecture
Supports auto-refresh, self-refresh, and low-power modes
On-Die Termination (ODT), Data Bus Inversion (DBI), write leveling
Compliant with JEDEC JESD79‑4 DDR4 SDRAM standard
FBGA package, lead-free and RoHS compliant
This device is designed for use in embedded systems, industrial applications, automotive electronics, and other systems requiring reliable, high‑performance memory.
