Description
Active, Read, Write, Precharge, Auto‑Refresh, Self‑Refresh
Burst lengths: BL8 (fixed) and BC4 (burst chop 4)
Low‑power modes: Active Power‑Down, Precharge Power‑Down, Low‑Power Auto Self‑Refresh (LPASR)
Signal Integrity & Reliability Features:
Data Bus Inversion (DBI): Reduces I/O power and improves signal quality
Write CRC & Command/Address (CA) Parity: Error detection for robust data/command transmission
On‑Die VREFDQ Generation: Eliminates external reference voltage components
ZQ Calibration: Optimizes output driver impedance
On‑Die Termination (ODT): Nominal, park, and dynamic ODT for improved signal integrity
Per‑DRAM Addressability: Enables individual device control in multi‑rank systems
Package & Environmental: Packaged in a 78‑ball FBGA (7.5 × 11 mm) surface‑mount package; operates over 0°C to +95°C (commercial) or -40°C to +95°C (industrial/IT variant)Micron.
Applications: Embedded computing, industrial control, networking equipment, high‑bandwidth embedded systems, and consumer electronics.
Short Functional Summary (1‑line)
16Gb DDR4 SDRAM (2G×8), 3200 MT/s, 1.2V, 78‑FBGA, 0–95°C, high‑bandwidth volatile memory for embedded/industrial systems.