• MT40A2G8JC-062E
  • MT40A2G8JC-062E

MT40A2G8JC-062E

No.Micron memory chip
Date code: 25+
MT40A2G8JC-062E is a high‑performance Micron DDR4 SDRAM memory IC, organized as 2G × 8‑bit (16 Gbit) volatile memory, optimized for high‑bandwidth, low‑power embedded, industrial, and networking applicationsMicron.
Core Functional Overview
High‑Speed Volatile Memory: Provides fast random‑access data storage for CPUs, FPGAs, SoCs, and embedded controllers, supporting a 3200 MT/s data rate at 1.6 GHz clock frequency (tCK = 0.625 ns) with CL = 22.
16‑Bank Architecture: Features 16 internal banks (4 groups × 4 banks) for parallel access and reduced bank conflicts, enabling efficient multi‑threaded data operations.
8n‑Prefetch Architecture: Delivers high bandwidth via an 8‑nibble prefetch design, supporting burst read/write operations (BL8/BC4) while maintaining full DDR4 command compatibility.
Low‑Voltage Operation: Operates on a 1.2V VDD/VDDQ supply (1.14V–1.26V) and 2.5V VPP for low power consumption, ideal for energy‑constrained systems.
Standard DDR4 Command Set:
$22.56
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  • MT40A2G8JC-062E

Description

Active, Read, Write, Precharge, Auto‑Refresh, Self‑Refresh
Burst lengths: BL8 (fixed) and BC4 (burst chop 4)
Low‑power modes: Active Power‑Down, Precharge Power‑Down, Low‑Power Auto Self‑Refresh (LPASR)
Signal Integrity & Reliability Features:
Data Bus Inversion (DBI): Reduces I/O power and improves signal quality
Write CRC & Command/Address (CA) Parity: Error detection for robust data/command transmission
On‑Die VREFDQ Generation: Eliminates external reference voltage components
ZQ Calibration: Optimizes output driver impedance
On‑Die Termination (ODT): Nominal, park, and dynamic ODT for improved signal integrity
Per‑DRAM Addressability: Enables individual device control in multi‑rank systems
Package & Environmental: Packaged in a 78‑ball FBGA (7.5 × 11 mm) surface‑mount package; operates over 0°C to +95°C (commercial) or -40°C to +95°C (industrial/IT variant)Micron.
Applications: Embedded computing, industrial control, networking equipment, high‑bandwidth embedded systems, and consumer electronics.
Short Functional Summary (1‑line)
16Gb DDR4 SDRAM (2G×8), 3200 MT/s, 1.2V, 78‑FBGA, 0–95°C, high‑bandwidth volatile memory for embedded/industrial systems.