Date code: 25+ MT40A1G8WE-083E:AAT:B is a Micron DDR4 SDRAM memory device optimized for automotive/industrial applicationsMicron. It is organized as 1G × 8 bits, providing a total density of 8 gigabits (1 gigabyte)Micron. This component operates at a data rate of 2400 Mbps per pin, corresponding to a speed grade of DDR4‑2400 with a clock cycle time of tCK = 0.833 ns and CAS latency CL = 16Micron. It features an 8n‑prefetch architecture and a high‑speed interface that transfers two data words per clock cycle at the I/O pins. Key Specifications & Features Voltage: Nominal core/I/O voltage VDD = VDDQ = 1.2V ±60mV; VPP = 2.5V Package: 78‑ball FBGA (8mm × 12mm), lead‑free and RoHS compliant Temperature Grade: AAT:B = Automotive‑grade (‑40°C to +105°C) with die revision B Bank Structure: 16 internal banks (4 groups × 4 banks) for high parallelism Refresh: Temperature‑Controlled Refresh (TCR), 8192 cycles (64ms @ ≤85°C; 32ms @ 85–95°C; 16ms @ 95–105°C) Power Modes: Self‑refresh, Low‑Power Auto Self‑Refresh (LPASR), self‑refresh abort Signal Integrity: On‑Die Termination (ODT), Data Bus Inversion (DBI), write leveling, read leveling Compliance: JEDEC JESD79‑4 standard, AEC‑Q100 qualifiedMicron Marking: :B denotes Micron’s internal die revision and quality traceability code This device is designed for high reliability, low power, and wide temperature operation, making it suitable for automotive electronics, industrial control, and embedded systems requiring robust memory performanceMicron.
MT40A256M16GE-083E IT:B – English Functional Description Functional Description The MT40A256M16GE-083E IT:B is an industrial‑grade DDR4 SDRAM from Micron. It is organized as 256M × 16 bits, providing a total density of 4 Gb (512 MB). This device supports a data rate of 2400 Mbps per pin, corresponding to the speed grade DDR4‑2400 with a clock cycle time of tCK = 0.833 ns. It uses an 8n‑prefetch architecture and operates at a nominal supply voltage of 1.2V, balancing high bandwidth and low power consumption. Key Features Industrial temperature grade: IT:B = −40°C to +95°C AEC‑Q100 qualified for automotive/industrial applications 16 internal banks (4 bank groups) for efficient parallel access Supports auto‑refresh, self‑refresh, and low‑power self‑refresh modes On‑Die Termination (ODT), Data Bus Inversion (DBI), and write leveling Compliant with JEDEC JESD79‑4 DDR4 SDRAM standard FBGA package, lead‑free and RoHS compliant :B indicates Micron internal die revision and traceability code This memory is suitable for industrial control, automotive infotainment, networking, and embedded systems requiring stable performance over extended temperature ranges.
