• MT40A256M16GE-075E
  • MT40A256M16GE-075E

MT40A256M16GE-075E

No.Micron memory chip
Date code: 25+
Device Type    DDR4 SDRAM (Synchronous Dynamic Random-Access Memory)
Density    4Gb (Gigabit) - 256 Megabyte x 16 configuration
Organization    256M x 16 (256 Megabit word × 16-bit width)
Package    78-ball FBGA (Fine-pitch Ball Grid Array)
Speed Grade    -075E (DDR4-2666, 2666 MT/s)
Voltage    1.2V VDD / 1.2V VDDQ
Temperature Range    Extended temperature range (-40°C to +95°C)
Features    • x16 data width configuration• 8 internal banks (2 groups of 4 banks each)• Burst Length: 8 (BL8) and Burst Chop: 4 (BC4)• On-Die Termination (ODT)• Temperature sensor with automatic refresh control• Data Bus Inversion (DBI)• Command/Address Parity (CA Parity)• Write Cyclic Redundancy Check (CRC)• Fine granularity refresh (FGR)• Target Row Refresh (TRR)• Write leveling• Multi-purpose register (MPR) for training
$15.42
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  • MT40A256M16GE-075E

Description

Device Type    DDR4 SDRAM (Synchronous Dynamic Random-Access Memory)
Density    4Gb (Gigabit) - 256 Megabyte x 16 configuration
Organization    256M x 16 (256 Megabit word × 16-bit width)
Package    78-ball FBGA (Fine-pitch Ball Grid Array)
Speed Grade    -075E (DDR4-2666, 2666 MT/s)
Voltage    1.2V VDD / 1.2V VDDQ
Temperature Range    Extended temperature range (-40°C to +95°C)
Features    • x16 data width configuration• 8 internal banks (2 groups of 4 banks each)• Burst Length: 8 (BL8) and Burst Chop: 4 (BC4)• On-Die Termination (ODT)• Temperature sensor with automatic refresh control• Data Bus Inversion (DBI)• Command/Address Parity (CA Parity)• Write Cyclic Redundancy Check (CRC)• Fine granularity refresh (FGR)• Target Row Refresh (TRR)• Write leveling• Multi-purpose register (MPR) for training