MT40A1G16KD-062E:E TR

Name: MT40A1G16KD-062E:E TR
Brand: gepuwei
SKU: Micron memory chip
Availability: InStock
Rating: 5 (1 reviews)

No.Micron memory chip

Date code: 25+
MT40A1G16KD-062E:E TR is a 16Gb (1G × 16) DDR4 SDRAM memory device manufactured by Micron Technology. It is organized as 1 Gigabit × 16 bits, delivering a total density of 16 gigabits (2 gigabytes). The device operates at a 3200 Mbps data rate per pin, corresponding to a clock cycle time of tCK = 0.625 ns and CAS latency CL = 22 (DDR4‑3200 speed grade). It features an 8n‑prefetch architecture combined with a high‑speed interface that transfers two data words per clock cycle at the I/O pins.
This device is built with Micron’s TwinDie™ technology, integrating two 8Gb x8 dies into a single x16 configurationMicron. It supports 1.2V nominal core and I/O voltage (1.14V–1.26V) with on‑die, internal, adjustable VREFDQ generation and 1.2V pseudo open‑drain I/O. Key features include:

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Description

Programmable data strobe preambles and preamble training
Command/Address Latency (CAL) and multipurpose register read/write capability
Write leveling, self‑refresh, and Low‑Power Auto Self‑Refresh (LPASR)
Temperature‑Controlled Refresh (TCR), fine‑granularity refresh, and self‑refresh abort
Nominal, park, and dynamic On‑Die Termination (ODT)
Data Bus Inversion (DBI) and Per‑DRAM Addressability (PDA)
Compliance with JEDEC JESD‑79‑4 standards
96‑ball FBGA package (9mm × 13mm, Pb‑free)
Commercial operating temperature range: 0°C to +95°C
TR suffix indicates tape‑and‑reel packaging for automated assembly
The marking :E denotes Micron’s internal revision and quality control code, ensuring production traceability and reliability. This device is optimized for high‑bandwidth, low‑power applications including embedded systems, industrial computing, and consumer electronics.